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| VISHAY SMF5.0A to SMF51A Vishay Semiconductors Surface Mount ESD Protection Diodes \ Features For surface mounted applications Low-profile package Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) * Ideal for EFT protection of data lines in accordance with IEC 1000-4-4 (IEC801-4) * IEC 1000-4-2 (ESD) 15 kV (air) 8 kV (contact) IEC 1000-4-4 (EFT) 40 A (tp = 5/ 50 ns) IEC 1000-4-5 (Lightning) 24 A (tp = 8/ 20 s) * Low incremental surge resistance, excellent clamping capability * 200 W peak pulse power capability with a 10/1000 s waveform, repetition rate (duty cycle): 0.01 % * Very fast response time * High temperature soldering guaranteed: 260 C/ 10 seconds at terminals * * * * 17249 Mechanical Data Case: JEDEC DO-219-AB (SMF) Plastic case Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity:The band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: approx. 0.00035 oz, 0.01g Packaging Codes/Options: G1/10 K per 13 " reel (8 mm tape), 50 K/box G2/3 K per 7 " reel (8 mm tape), 30 K/box Absolute Maximum Ratings Ratings at 25 C, ambient temperature unless otherwise specified Parameter Peak pulse power dissipation 10/1000 s Test condition waveform1) 1) 1) Symbol PPPM PPPM IPPM IFSM Value 200 1000 next Table 20 Unit W W A A 8/20 s waveform Peak pulse current Peak forward surge current 1) 10/1000 s waveform 8.3 ms single half sine-wave Non-repetitive current pulse and derated above TA = 25 C Maximum Thermal Resistance Ratings at 25 C, ambient temperature unless otherwise specified Parameter Thermal resistance 2) Symbol RthJA Tstg, TJ Value 180 - 55 to + 150 Unit K/W C Operation junction and storage temperature range 2) Mounted on epoxy substrate with 3 x 3 mm, cu pads ( 40 m thick) Document Number 85811 Rev. 4, 17-Mar-03 www.vishay.com 1 SMF5.0A to SMF51A Vishay Semiconductors Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. V F = 3.5 V at IF = 12 A (uni-directional only) Partnumber Marking Code UNI Breakdown Voltage1) Test Current Stand-off Voltage Maximum Reverse Leakage @ VWM ID A 400 400 250 100 50 25 10 5.0 2.5 2.5 2.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Peak Pulse Surge Current 2,3) V(BR) V min SMF5.0A SMF6.0A SMF6.5A SMF7.0A SMF7.5A SMF8.0A SMF8.5A SMF9.0A SMF10A SMF11A SMF12A SMF13A SMF14A SMF15A SMF16A SMF17A SMF18A SMF20A SMF22A SMF24A SMF26A SMF28A SMF30A SMF33A SMF36A SMF40A SMF43A SMF45A SMF48A SMF51A 1) 2) 3) VISHAY Maximum Clamping Voltage @ IPPM VC V 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 @ IT mA 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VWM V 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 IPPM A 21.7 19.4 17.9 16.7 15.5 14.7 13.9 13.5 11.8 11.0 10.1 9.3 8.6 8.2 7.7 7.2 5.8 6.2 5.6 5.1 4.8 4.4 4.1 3.8 3.4 3.1 2.9 2.8 2.6 2.4 AE AG AK AM AP AR AT AV AX AZ BE BG BK BM BP BR BT BV BX BZ CE CG CK CM CP CR CT CV CX CZ 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 Pulse test tp 5.0 ms Surge current waveform 10/1000 s All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 85811 Rev. 4, 17-Mar-03 VISHAY SMF5.0A to SMF51A Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 10 Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25 C PPPM - Peak Pulse Power (kW) 1 0.1 0.1s 17250 1.0s 10s 100s 1.0ms 10ms td - Pulse Width (sec.) Figure 1. Peak Pulse Power Rating Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage, % 100 75 50 25 0 0 25 50 75 100 125 150 175 200 17251 TA - Ambient Temperature (C) Figure 2. Pulse Derating Curve 150 IPPM - Peak Pulse Current, % IRSM tr = 10 s Peak Value IPPM 100 TJ = 25 C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM Half Value - IPP 2 IPPM 50 10/1000 sec. Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 17252 t - Time (ms) Figure 3. Pulse Waveform Document Number 85811 Rev. 4, 17-Mar-03 www.vishay.com 3 SMF5.0A to SMF51A Vishay Semiconductors Package Dimensions in mm Cathode Band T op View VISHAY 1.8 0.1 1.0 0.2 5 0.98 0.1 2.8 0.1 0.05 - 0.30 5 Detail Z enlarged Z 0.60 0.25 0.00 - 0.10 3.7 0.2 17247 Mounting Pad Layout 1.6 1.2 1.2 17248 www.vishay.com 4 Document Number 85811 Rev. 4, 17-Mar-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to SMF5.0A to SMF51A Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85811 Rev. 4, 17-Mar-03 www.vishay.com 5 |
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